The extent of slip in a single crystal depends
on the magnitude of the shearing stress produced by external loads, the
geometry of the crystal structure, and the orientation of the active slip
planes with respect to the shearing stresses. Slip begins when the shearing
stress
on the slip plane in the slip direction reaches a threshold value called the critical resolved shear stress. This value is really the single crystal equivalent of the yield stress of an ordinary stress-strain curve. The value of the critical resolved shear stress depends chiefly on composition and temperature.
on the slip plane in the slip direction reaches a threshold value called the critical resolved shear stress. This value is really the single crystal equivalent of the yield stress of an ordinary stress-strain curve. The value of the critical resolved shear stress depends chiefly on composition and temperature.
The fact that different tensile loads are
required to produce slip in single crystals of different orientation can be rationalized
by a critical resolved shear stress. To calculate the critical resolved shear
stress from a single crystal tested in tension, it is necessary to know, from
X-ray diffraction, the orientation with respect to the tensile axis of the
plane on which slip first appears and the slip direction. Consider a
cylindrical single crystal with cross-sectional area A. The angle between the
normal to the slip plane and the tensile axis is ɸ, and the angle which the
slip direction makes with the tensile axis is λ. The area of the slip plane
inclined at the angle ɸ will be A /cos ɸ, and the component of the axial load
acting in the slip plane in the slip direction is P cos λ. Therefore, the
critical resolved shear stress is given by
ΤR = P cosλ cosɸ /A
According to the law of the critical resolved
shear stress, also known as Schmid's law, the limited number of slip systems
allows large differences in orientation between the slip plane and the tensile
axis. The magnitude of the critical resolved shear stress of a crystal is
determined by the interaction of its population of dislocations with each other
and with defects such as vacancies, interstitials, and impurity atoms. This
stress is greater than the stress required to move a single dislocation, but it
is appreciably lower than the stress required to produce slip in a perfect
lattice. On the basis of this reasoning, the critical resolved shear stress
should decrease as the density of defects decreases, provided that the total
number of imperfections is not zero. When the last dislocation is eliminated,
the critical resolved shear stress should rise abruptly to the high value
predicted for the shear strength of a perfect crystal. Experimental evidence
for the effect of decreasing defect density is shown by the fact that the
critical resolved shear stress of soft metals can be reduced to less than
one-third by increasing the purity. At the other extreme, micron-diameter
single-crystal filaments, or whiskers, can be grown essentially
dislocation-free. Tensile tests on these filaments have given strengths which
are approximately equal to the calculated strength of a perfect crystal.